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created in CBD ZnS and CBD CdZnS thin films. Figure 1 shows the quantum efficiency comparisons of the CIGS devices (19.89% efficiency with CdS, 19.52% efficiency with CdZnS, and 19.5%-efficiency with ZnS) prepared with CdS, ZnS, and CdZnS junction layers. It is evident from these measurements that significant current density is gained between 300 and 500 nm when ZnS and CdZnS buffer layers are Radio-frequency magnetron sputtering was used to deposit ZnS thin films doped with rare earth elements (Er and Yb) on glass substrates at two different temperatures (room temperature and 180 °C). The crystal structure, surface morphology, and optical properties of the deposited films were studied as a function of the deposition variables as a first step in the possible application of For this reason, ZnS:Cu and ZnS:Ag are not used as thin film EL phosphors. Mn 2+ ions may also generate green luminescence in other EL phosphor hosts. An effective oxide phosphor Zn 2−x Mn x SiO 4 (Minami et al. 1991 ) relies on the same inner-shell radiative transition as in ZnS:Mn. Production of thin ZnS films on NaCl crystal chips in vacuum Download PDF. Brief Communications and Letters to the Editor; Published: June 1970; Production of thin ZnS films on NaCl crystal chips in vacuum. K. -S. K. Rebane 1 & I. F. Tigane 1 Soviet Physics Journal volume 13, pages 815-817 (1970)Cite this article. 12 Accesses. Metrics details. Download to read the full article text The decay rate of the yellow emission in ZnS:Mn thin film electroluminescent devices increases at high luminance levels and a larger increase is observed for higher manganese concentrations. A stronger saturation of the emission is also observed when the manganese concentration is high. create Ni-doped ZnS powder materials with different molar ratios of Ni2+and Zn as follows: 0.0%, 0.2%, 0.3%, 0.6%, and 1%. The precipitated ZnS nad NiS nanoparticles were formed by stirring of the mixed solutions at 80 Cfor30 minutes following the chemical reactions Zn(CH 3COO) 2+Na 2S−→ZnS+2CH 3COONa NiSO 4+Na 2S−→NiS+Na 2SO 4 (1) View Full-Text Download PDF Browse Figures Citation Export Abstract Nanostructured thin films of Co-doped zinc sulfide were synthesized through femtosecond pulsed laser deposition. The scheme involved ablation of physically mixed Co and ZnS with pairs of ultrashort pulses separated in time in the 0-300 ps range. (JCPDS # 00-010-0454). The XRD pattern of ZnS thin film deposited on glass substrate has two very weak peaks at 2θ =28.63° and 47.97° which were indexed to (111) and (220) planes of cubic phase (JCPDS # 00-005-0566). The CdS/ZnS multilayer has similar diffraction pattern to that of ZnS thin films deposited on the glass substrate. This 5 The Optical Properties of ZnS x Se 1-X Thin Films. The transmission spectrums of the ZnS x Se 1-x thin films have been recorded in the spectral range of 330-1750 nm, using a spectrophotometer Hitachi U-3400. The transmission spectra for two ZnS 0.5 Se 0.5 thin films with different thicknesses are shown in Fig. 4.10. We developed the ZnS and samarium-doped ZnS thin films for photo-detector applications via a simple Nebulizer Spray Pyrolysis technique.
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